Molecular beam epitaxy (MBE), is
one of several methods of depositing single crystals. It was invented in the late 1960s at Bell
Telephone Laboratories by J. R. Arthur and Alfred Y. Cho.
The formation of crystals whose
orientation is related to that of the substrate (i.e. Epitaxial) by directing a molecular beam
at a crystalline substrate under ultrahigh vacuum conditions.
Molecular Beam Epitaxy, also
known as MBE, is one of a number of methods of thin-film deposition. In
solid-source MBE, ultra-pure elements such as gallium and arsenic are heated
in separate quasi-knudsen effusion cells until they each slowly begin to evaporate.
Process used to make compound (multi-layer) semiconductors. Consists of depositing alternating layers of materials, layer by layer,
one type after another (such as the semiconductors gallium arsenide and aluminium gallium arsenide).
[MBE] Process used to make compound
[multi-layer] semiconductors. Consists of depositing alternating layers of materials, layer by layer,
one type after another [such as the semiconductors gallium arsenide and aluminum gallium arsenide].
Process used to make compound (multi-layer) semiconductors. Consists of depositing alternating layers of materials, layer by layer,
one type after another (such as the semiconductors gallium arsenide and aluminium gallium arsenide).
[MBE] Process used to make compound
(multi-layer) semiconductors. Consists of depositing alternating layers of materials, layer by layer,
one type after another (such as the semiconductors gallium arsenide and aluminum gallium arsenide).
