Secondary ion mass spectrometry (SIMS) is a technique used to analyze the composition of solid surfaces and thin films by sputtering the surface of the specimen with a focused primary ion beam and collecting and analyzing ejected secondary ions. While only charged secondary ions emitted from the material surface through the sputtering process are used to analyze the chemical composition of the material, these represent a small fraction of the particles emitted from the sample. These secondary ions are measured with a mass spectrometer to determine the elemental, isotopic, or molecular composition of the surface. SIMS is the most sensitive surface analysis technique, being able to detect elements present in the parts per billion range.

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Method in which a mass spectrometer is used to measure the mass-to-charge quotient and abundance of secondary ions emitted from a sample as a result of bombardment by energetic ions

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Method in which a mass spectrometer is used to measure the mass-to-charge quotient and abundance of secondary ions emitted from a sample as a result of bombardment by energetic ions

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Secondary ion mass spectrometry

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Chemical analysis of surfaces by identifying the masses of desorbed ions. Desorption is achieved by sputtering with a focused ion beam (e.g. Ar) and the detection is done by a mass spectrometer, whereas positive or negative secondary ions can be collected in two steps. Depth profiles can be obtained by a longer sputtering time and or a higher bombardment energy.

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Secondary ion mass spectrometry

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