Chemical Vapour Deposition

 

Chemical vapor deposition (CVD) is a chemical process used to produce high-purity, high-performance solid materials. The process is often used in the semiconductor industry to produce thin films. In a typical CVD process, the wafer (substrate) is exposed to one or more volatile precursors, which react and/or decompose on the substrate surface to produce the desired deposit. Frequently, volatile by-products are also produced, which are removed by gas flow through the reaction chamber.

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Synthesis of a solid material by chemical reaction of a gaseous precursor or mixture of precursors, commonly initiated by heat

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A technique used to deposit thin layers of coatings on a substrate . In CVD, chemicals are vaporized and then applied to the substrate using an inert gas such as nitrogen as a carrier. CVD is used in the production of microchips, integrated circuits, sensors, and protective coatings.

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A technique used to deposit coatings, where chemicals are first vaporized, and then applied using an inert carrier gas such as nitrogen.

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A coating technique where coating material condenses from different gas phases and a chemical reaction is involved. Volatile chemicals are brought in a reaction chamber where the chemical reaction is initiated due to temperature, pressure or a plasma for example.

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Coating procedure whereby a fixed component is deposited on the heated surface of a substrate on account of a chemical reaction from the vapor.

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A technique used to deposit coatings, where chemicals are first vaporized, and then applied using an inert carrier gas such as nitrogen.

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A technique used to deposit coatings, where chemicals are first vaporized, and then applied using an inert carrier gas such as nitrogen.

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A technique used to deposit coatings, where chemicals are first vaporized, and then applied using an inert carrier gas such as nitrogen.

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Refer to this page:

Electron cyclotron wave resonance

Plasma enhanced chemical vapour deposition

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Related Terms:

 

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